Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup
Arzig M, Salamon M, Uhlmann N, Wellmann P (2019)
Publication Language: English
Publication Type: Journal article, Original article
Publication year: 2019
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 963
Pages Range: 14-17
Conference Proceedings Title: Materials Science Forum
Event location: Birmingham
ISBN: 9783035713329
DOI: 10.4028/www.scientific.net/MSF.963.14
Abstract
A crystal comprising various polytype switches was analyzed in detail. A very flat temperature profile together with an on axis seed are used to increase the probability for the nucleation of foreign polytypes during growth. Formation of foreign polytype occurred from thin lamella propagating from the edge of the main facet to the crystal rim as well as from 2D nucleation. The evolution of the crystal surface during the growth time is visualized using in-situ XRay computed tomography. Two concurrent growth centers are identified in the beginning of the growth process. Nucleation and lateral growth of foreign polytypes in the main facet area can be traced during the growth process.
Authors with CRIS profile
Matthias Arzig
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
Germany (DE)How to cite
APA:
Arzig, M., Salamon, M., Uhlmann, N., & Wellmann, P. (2019). Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup. Materials Science Forum, 963, 14-17. https://doi.org/10.4028/www.scientific.net/MSF.963.14
MLA:
Arzig, Matthias, et al. "Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup." Materials Science Forum 963 (2019): 14-17.
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