Role of disorder on transport in boron-doped multiwalled carbon nanotubes

Krstic V, Blumentritt S, Muster J, Roth S, Rubio A (2003)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2003

Journal

Physical Review B American Physical Society

Book Volume: 67

Journal Issue: 4

DOI: 10.1103/PhysRevB.67.041401

Abstract

Electrical transport measurements on boron-doped multiwalled carbon nanotubes deposited on top of predefined electrode patterns have been performed. The temperature dependence of the conductance reveals through two-point configuration, the appearance of a zero-bias anomaly which was found to be not compatible with the existence of a Luttinger-liquid-like state in the doped multiwalled carbon nanotubes. The experimental findings indicate that, in order to properly interpret the charge transport properties of multiwalled carbon nanotubes, the doping as well as the energy window in which the experiments are performed are crucial points.

Authors with CRIS profile

Vojislav Krstic Professur für Angewandte Physik

Involved external institutions

Max-Planck-Institut für Festkörperforschung DE Germany (DE) University of Basque Country / Universidad del Pais Vasco (UPV) / Euskal Herriko Unibersitatea (EHU) ES Spain (ES) PFH – Private Hochschule Göttingen DE Germany (DE)

How to cite

APA:

Krstic, V., Blumentritt, S., Muster, J., Roth, S., & Rubio, A. (2003). Role of disorder on transport in boron-doped multiwalled carbon nanotubes. Physical Review B, 67(4). https://doi.org/10.1103/PhysRevB.67.041401

MLA:

Krstic, Vojislav, et al. "Role of disorder on transport in boron-doped multiwalled carbon nanotubes." Physical Review B 67.4 (2003).

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