Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires
Connaughton S, Kolesnik-Gray M, Hobbs R, Lotty O, Holmes JD, Krstic V (2016)
Publication Language: English
Publication Type: Journal article, Letter
Publication year: 2016
Journal
Publisher: Beilstein-Institut
Book Volume: 7
Pages Range: 1284-1288
DOI: 10.3762/bjnano.7.119
Open Access Link: https://www.beilstein-journals.org/bjnano/home/home.htm
Abstract
The dependence of the resistivity with changing diameter of heavily-doped self-seeded germanium nanowires was studied for the diameter range 40 to 11 nm. The experimental data reveal an initial strong reduction of the resistivity with diameter decrease. At about 20 nm a region of slowly varying resistivity emerges with a peak feature around 14 nm. For diameters above 20 nm, nanowires
were found to be describable by classical means. For smaller diameters a quantum-based approach was required where we employed the 1D Kubo–Greenwood framework and also revealed the dominant charge carriers to be heavy holes. For both regimes the theoretical results and experimental data agree qualitatively well assuming a spatial spreading of the free holes towards the
nanowire centre upon diameter reduction.
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APA:
Connaughton, S., Kolesnik-Gray, M., Hobbs, R., Lotty, O., Holmes, J.D., & Krstic, V. (2016). Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires. Beilstein Journal of Nanotechnology, 7, 1284-1288. https://doi.org/10.3762/bjnano.7.119
MLA:
Connaughton, Stephen, et al. "Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires." Beilstein Journal of Nanotechnology 7 (2016): 1284-1288.
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