Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration
Matthus C, Erlbacher T, Schöfer B, Bauer A, Frey L (2017)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2017
Journal
Publisher: Trans Tech Publications Ltd
Pages Range: 618-621
Journal Issue: 897
ISBN: 9783035710434
DOI: 10.4028/www.scientific.net/MSF.897.618
Abstract
The usability of 4H-SiC pin-diodes as nearly linear temperature sensors up to 800 K is demonstrated. Two sensor concepts were evaluated including the constant current forward bias (CCFB) concept and the integrated proportional to absolute temperature (PTAT) concept. The maximum sensitivity was 4.5 mV/K for the CCFB and an applied current density of 118 nA/cm. Additionally, this device can be used for UV detection, too, demonstrating the feasibility of 4H-SiC multi-sensor integration.
Authors with CRIS profile
Christian Matthus
Lehrstuhl für Elektronische Bauelemente
Tobias Erlbacher
Technische Fakultät
Lothar Frey
Lehrstuhl für Elektronische Bauelemente
Related research project(s)
Involved external institutions
Germany (DE)How to cite
APA:
Matthus, C., Erlbacher, T., Schöfer, B., Bauer, A., & Frey, L. (2017). Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration. Materials Science Forum, 897, 618-621. https://doi.org/10.4028/www.scientific.net/MSF.897.618
MLA:
Matthus, Christian, et al. "Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration." Materials Science Forum 897 (2017): 618-621.
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