Growth of cubic SiC single crystals by the physical vapor transport technique

Semmelroth K, Krieger M, Pensl G, Nagasawa H, Püsche R, Hundhausen M, Ley L, Nerding M, Strunk HP (2007)

Publication Type: Journal article

Publication year: 2007


Publisher: Elsevier

Book Volume: 308

Pages Range: 241-246

DOI: 10.1016/j.jcrysgro.2007.07.060


Suitable process parameters for the growth of cubic 3C-SiC single crystals via the seeded physical vapor transport (PVT) technique, also known as the modified Lely method, have been determined. Free-standing, 200 μm thick 3C-SiC epilayers with (0 0 1)- or (0 0 1̄)-face grown on undulant Si (0 0 1) as well as 3C-SiC platelets with [1 1 1]- or [1̄ 1̄ 1̄]-orientation grown by thermal decomposition of methyl trichlorosilane in hydrogen were employed as seed crystals. The source material consisted of stoichiometric SiC; in addition, a separate Si source was deposited in the furnace at a temperature of about 1500 °C. The temperature of the seed crystals was kept at about 1900 °C. Stable growth of 3C-SiC bulk material of high crystalline quality was reached on 3C-SiC seed crystals with (0 0 1)-face providing a low density of planar defects and at near-thermal-equilibrium conditions resulting in a reduction of internal stress and as a consequence in avoiding the generation of new extended crystal defects. The growth rate achieved under these conditions was approximately 0.05 mm/h. The nitrogen donor concentration in the grown 3C-SiC crystals was determined to be equal to (2-6)×1018 cm-3. © 2007 Elsevier B.V. All rights reserved.

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Semmelroth, K., Krieger, M., Pensl, G., Nagasawa, H., Püsche, R., Hundhausen, M.,... Strunk, H.P. (2007). Growth of cubic SiC single crystals by the physical vapor transport technique. Journal of Crystal Growth, 308, 241-246.


Semmelroth, Kurt, et al. "Growth of cubic SiC single crystals by the physical vapor transport technique." Journal of Crystal Growth 308 (2007): 241-246.

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