Gerhard Pensl

Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures (2014) Beljakowa S, Hauck M, Bockstedte MG, Fromm F, Hundhausen M, Nagasawa H, Weber HB, et al. Journal article Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects? (2012) Zippelius B, Glas A, Weber HB, Pensl G, Kimoto T, Krieger M Journal article, Letter Silicon Carbide and Related Materials 2009 - Parts 1 and 2 (2010) Bauer A, Friedrichs P, Krieger M, Pensl G, Rupp R, Seyller T Edited Volume Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors (2008) Krieger M, Beljakowa S, Trapaidze L, Frank T, Weber HB, Pensl G, Hatta N, et al. Journal article Growth of cubic SiC single crystals by the physical vapor transport technique (2007) Semmelroth K, Krieger M, Pensl G, Nagasawa H, Püsche R, Hundhausen M, Ley L, et al. Journal article Impurity Conduction in Silicon Carbide (2007) Krieger M, Semmelroth K, Weber HB, Pensl G, Rambach M, Frey L Journal article Electronic Raman Studies of Shallow Donors in Silicon Carbide (2006) Püsche R, Hundhausen M, Ley L, Semmelroth K, Pensl G, Desperrier P, Wellmann P, et al. Journal article, Original article Deactivation of nitrogen donors in silicon carbide (2006) Schmid F, Pensl G, Bockstedte MG, Mattausch A, Pankratov O, Ohshima T, Itoh H, et al. Journal article Implantation and Annealing of Aluminum in 4H Silicon Carbide (2005) Rambach M, Schmid F, Krieger M, Frey L, Bauer A, Pensl G, Ryssel H Journal article On the excitation mechanism of erbium and ytterbium in the quaternary compounds InGaAsP (1996) Wellmann P, Winnacker A, Pensl G Journal article, Original article