Electronic Raman Studies of Shallow Donors in Silicon Carbide

Püsche R, Hundhausen M, Ley L, Semmelroth K, Pensl G, Desperrier P, Wellmann P, Haller EE, Ager J, Starke U (2006)

Publication Language: English

Publication Type: Journal article, Original article

Publication year: 2006


Book Volume: 527-529

Pages Range: 579

Conference Proceedings Title: Materials Science Forum (Volumes 527-529)

DOI: 10.4028/www.scientific.net/MSF.527-529.579


We study electronic Raman scattering of phosphorus and nitrogen doped silicon carbide (SiC) as a function of temperature in the range 7 K < T < 300K. We observe a series of peaks in the Raman spectra which we assign to electronic transitions at nitrogen and phosphorus donors on different lattice sites. These transitions are identified as valley orbit transitions of the Is donor ground state. From the polarization dependence of the observed peaks, we find that all electronic Raman signals have E2-symmetry of C 6v for the hexagonal polytypes (6H-SiC and 4H-SiC) and E-syinmetry of C3., for 15R-SiC. Wc find a reduction of the intensities of all valley-orbit Raman signals with increasing temperature and ascribe this reduction to the decreasing occupation of donor states.

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Püsche, R., Hundhausen, M., Ley, L., Semmelroth, K., Pensl, G., Desperrier, P.,... Starke, U. (2006). Electronic Raman Studies of Shallow Donors in Silicon Carbide. Materials Science Forum, 527-529, 579. https://doi.org/10.4028/www.scientific.net/MSF.527-529.579


Püsche, Roland, et al. "Electronic Raman Studies of Shallow Donors in Silicon Carbide." Materials Science Forum 527-529 (2006): 579.

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