Fundamental Efficiency Limits in Power Electronic Systems

Heckel T, Rettner C, März M (2016)

Publication Language: English

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2016

Publisher: Institute of Electrical and Electronics Engineers Inc.

Article Number: 7572399

ISBN: 9781479965823

DOI: 10.1109/INTLEC.2015.7572399

Abstract

In this paper, the efficiency limits of power electronic converters are investigated from a semiconductor point of view. The approach is presented on the example of a hard switching half bridge while taking Si, SiC and GaN devices into account. Beside parasitic effects of the semiconductors itself, further converter non-idealities and limits from a thermal point of view are discussed. All in all, the obtained results act as a design guideline and allow for an easy comparison of different semiconductor technologies.

Authors with CRIS profile

Thomas Heckel Lehrstuhl für Elektronische Bauelemente Martin März Lehrstuhl für Leistungselektronik (LEE)

Related research project(s)

Dynamic Characterization of Molded Devices and Fundamental Investigations on Reliability (ZuGaNG) Zukünftige, effiziente Energiewandlung mit GaN-basierter Leistungselektronik der nächsten Generation April 1, 2014 - March 31, 2017

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Germany (DE)

How to cite

APA:

Heckel, T., Rettner, C., & März, M. (2016). Fundamental Efficiency Limits in Power Electronic Systems. In Proceedings of the 2015 IEEE International Telecommunications Energy Conference, INTELEC 2015. Institute of Electrical and Electronics Engineers Inc..

MLA:

Heckel, Thomas, Cornelius Rettner, and Martin März. "Fundamental Efficiency Limits in Power Electronic Systems." Proceedings of the 2015 IEEE International Telecommunications Energy Conference, INTELEC 2015 Institute of Electrical and Electronics Engineers Inc., 2016.

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