Optimization of 4H-SiC photodiodes as selective UV sensors

Matthus C, Burenkov A, Erlbacher T (2017)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2017

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Pages Range: 622-625

Journal Issue: 897

ISBN: 9783035710434

DOI: 10.4028/www.scientific.net/MSF.897.622

Abstract

The spectral responsivity of 4H-SiC photodiodes was studied and optimized in this paper with the aim to realize UV photo-sensors, selectively sensitive either to harder or to softer UV radiation. The spectral selectivity of the SiC-photodiodes was achieved by optimizing doping profiles in the active regions of the photodiodes and of the anti-reflective coating. A shallow doping profile of the p-emitter allowed an enhancement of sensitivity for hard UV radiation. Deeper doping profiles were chosen for detection of softer UV radiation. The impact of the variations of the thickness of protective and anti-reflective layers was studied as well.

Authors with CRIS profile

Christian Matthus Lehrstuhl für Elektronische Bauelemente Tobias Erlbacher Technische Fakultät

Related research project(s)

Development of semiconductor sensors based on silicon carbide Oct. 1, 2014 - June 15, 2018

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Matthus, C., Burenkov, A., & Erlbacher, T. (2017). Optimization of 4H-SiC photodiodes as selective UV sensors. Materials Science Forum, 897, 622-625. https://doi.org/10.4028/www.scientific.net/MSF.897.622

MLA:

Matthus, Christian, Alexander Burenkov, and Tobias Erlbacher. "Optimization of 4H-SiC photodiodes as selective UV sensors." Materials Science Forum 897 (2017): 622-625.

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