Slew rate control of a 600 V 55 mΩ GaN cascode

Endruschat A, Heckel T, Reiner R, Waltereit P, Quay R, Ambacher O, März M, Eckardt B, Frey L (2016)

Publication Language: English

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2016

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 334-339

Event location: Fayetteville, AR US

ISBN: 978-1-5090-1576-4

DOI: 10.1109/WiPDA.2016.7799963

Abstract

This paper presents a 600 V, 55 m Omega GaN cascode with slew rate control. The time constants of cascodes which determine the switching speed are analyzed, discussed and verified by time domain simulations. Clamped inductive switching measurements of commercial and a custom-built GaN cascodes prove the applicability of the switching speed control mechanisms with additional passive components. The gathered experiences are applied to a custom-built modular cascode, which shows simple switching speed controllability by utilizing a standard gate drive.

Authors with CRIS profile

Achim Endruschat Lehrstuhl für Leistungselektronik (LEE) Thomas Heckel Lehrstuhl für Elektronische Bauelemente Martin März Technische Fakultät Lothar Frey Lehrstuhl für Elektronische Bauelemente

Related research project(s)

Dynamic Characterization of Molded Devices and Fundamental Investigations on Reliability (ZuGaNG) Zukünftige, effiziente Energiewandlung mit GaN-basierter Leistungselektronik der nächsten Generation April 1, 2014 - March 31, 2017

Involved external institutions

Fraunhofer-Institut für Angewandte Festkörperphysik (IAF) / Fraunhofer Institute for Applied Solid State Physics DE Germany (DE) Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Albert-Ludwigs-Universität Freiburg DE Germany (DE)

How to cite

APA:

Endruschat, A., Heckel, T., Reiner, R., Waltereit, P., Quay, R., Ambacher, O.,... Frey, L. (2016). Slew rate control of a 600 V 55 mΩ GaN cascode. In IEEE (Eds.), Proceedings of the 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016 (pp. 334-339). Fayetteville, AR, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Endruschat, Achim, et al. "Slew rate control of a 600 V 55 mΩ GaN cascode." Proceedings of the 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016, Fayetteville, AR Ed. IEEE, Institute of Electrical and Electronics Engineers Inc., 2016. 334-339.

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