Electrical reliability aspects of through the gate implanted MOS structures with thin oxides

Jank MPM, Lemberger M, Bauer A, Frey L, Ryssel H (2001)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2001

Journal

Microelectronics Reliability Elsevier

Publisher: Elsevier Ltd

Book Volume: 41

Pages Range: 987-990

Journal Issue: 7

DOI: 10.1016/S0026-2714(01)00053-1

Abstract

The effect of through the gate implantation (TGI) on MOS devices with oxide thicknesses of 3.3, 4.0, and 20 nm is studied, utilizing constant voltage stress tests and a substrate hot electron (SHE) injection technique. For 3.3 and 4.0 nm thick oxides, a dependence of time to breakdown on TGI dose is detected which, for 3.3 nm samples, diminishes with increasing test voltage. SHE injection measurements show a TGI induced increase in intrinsic electron trap density and also an increase in trap generation rate during sample stressing. A change of electron trap generation dynamics seems to be the main cause for oxide weakening due to TGI.

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Jank, M.P.M., Lemberger, M., Bauer, A., Frey, L., & Ryssel, H. (2001). Electrical reliability aspects of through the gate implanted MOS structures with thin oxides. Microelectronics Reliability, 41(7), 987-990. https://doi.org/10.1016/S0026-2714(01)00053-1

MLA:

Jank, Michael P. M., et al. "Electrical reliability aspects of through the gate implanted MOS structures with thin oxides." Microelectronics Reliability 41.7 (2001): 987-990.

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