Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates

Schuh P, Vecera P, Hirsch A, Syväjärvi M, Litrico G, La Via F, Mauceri M, Wellmann P (2016)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2016

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

City/Town: Switzerland

Book Volume: 858

Pages Range: 89-92

Conference Proceedings Title: Materials Science Forum (Volume 858)

Event location: Giardini Naxos IT

ISBN: 9783035710427

DOI: 10.4028/www.scientific.net/MSF.858.89

Abstract

We have developed and investigated the quasi-bulk crystal growth of 3C-SiC on transferred, high quality, CVD-grown templates using a sublimation sandwich technique. The 3CSiC seeding template layers grown on silicon were removed from the silicon carrier using a solution of hydrofluoric acid, nitric acid and water and glued to a SiC substrate using carbon glue. The transferred layers were used as seeding material to grow high quality, single crystalline, double position boundary free 3C-SiC crystals with thicknesses of up to 860 μm and a size of 18 x 20 mm. Analysis of the bulk-like 3C-SiC layers was carried out using Laue measurement in back-reflecting geometry, Raman spectroscopy and optical microscopy.

Authors with CRIS profile

Philipp Schuh Institute Materials for Electronics and Energy Technology (i-MEET) Philipp Vecera Lehrstuhl für Organische Chemie II Andreas Hirsch Lehrstuhl für Organische Chemie II Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

CNR Institute for Microelectronics and Microsystems (CNR-IMM) IT Italy (IT) E.T.C. (LPE Spa - Epitaxial Technology Center) IT Italy (IT) Linköpings universitet / Linköping University SE Sweden (SE)

How to cite

APA:

Schuh, P., Vecera, P., Hirsch, A., Syväjärvi, M., Litrico, G., La Via, F.,... Wellmann, P. (2016). Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates. Materials Science Forum, 858, 89-92. https://doi.org/10.4028/www.scientific.net/MSF.858.89

MLA:

Schuh, Philipp, et al. "Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates." Materials Science Forum 858 (2016): 89-92.

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