E.T.C. (LPE Spa - Epitaxial Technology Center)

Industry / private company


Location: Catania, Italy (IT) IT

ISNI: -


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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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Abstract

Journal

In situ bow reduction during sublimation growth of cubic silicon carbide (2022) Kollmuß M, Mauceri M, Roder M, La Via F, Wellmann P Journal article Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks (2019) Schuh P, Steiner J, La Via F, Mauceri M, Zielinski M, Wellmann P Journal article, Original article Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates (2019) Schuh P, Künecke U, Litrico G, Mauceri M, La Via F, Monnoye S, Zielinski M, Wellmann P Journal article, Original article Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth (2019) Schuh P, La Via F, Mauceri M, Zielinski M, Wellmann P Journal article From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction (2018) La Via F, Severino A, Anzalone R, Bongiorno C, Litrico G, Mauceri M, Schöler M, et al. Journal article, Original article Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers (2017) Schöler M, Schuh P, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers (2017) Schuh P, Schöler M, Wilhelm M, Syväjärvi M, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article 3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers (2017) Schuh P, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article Growing bulk-like 3C-SiC from seeding material produced by CVD (2017) Schuh P, Arzig M, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates (2016) Schuh P, Vecera P, Hirsch A, Syväjärvi M, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article