From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
La Via F, Severino A, Anzalone R, Bongiorno C, Litrico G, Mauceri M, Schöler M, Schuh P, Wellmann P (2018)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2018
Journal
Publisher: Elsevier Ltd
Book Volume: 78
Pages Range: 57-68
DOI: 10.1016/j.mssp.2017.12.012
Abstract
In this review the effect of the growth process on the formation of defects in the hetero-epitaxial 3C-SiC film and the possible path for defects reduction has been reported. In our analysis of the experimental data we started from the realization of the carbonization layer, the defects at the interface and in the silicon substrate, to the growth of thin and even very thick layers. The discussion has been focalized on the growth on planar blanket Si substrates without the presence of structures or specific buffer layers. Both Chemical Vapour Deposition (CVD)
and Sublimation Epitaxy (SE) processes have been reported and studied in detail.
Authors with CRIS profile
Michael Schöler
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Philipp Schuh
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
CNR Institute for Microelectronics and Microsystems (CNR-IMM)
Italy (IT)
E.T.C. (LPE Spa - Epitaxial Technology Center)
Italy (IT)
STMicroelectronics N.V.
Switzerland (CH)
Italy (IT)
E.T.C. (LPE Spa - Epitaxial Technology Center)
Italy (IT)
STMicroelectronics N.V.
Switzerland (CH)
How to cite
APA:
La Via, F., Severino, A., Anzalone, R., Bongiorno, C., Litrico, G., Mauceri, M.,... Wellmann, P. (2018). From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction. Materials Science in Semiconductor Processing, 78, 57-68. https://doi.org/10.1016/j.mssp.2017.12.012
MLA:
La Via, F., et al. "From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction." Materials Science in Semiconductor Processing 78 (2018): 57-68.
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