Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition

Mueller J, Boescke TS, Schroeder U, Reinicke M, Oberbeck L, Zhou D, Weinreich W, Kuecher P, Lemberger M, Frey L (2009)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2009

Journal

Microelectronic Engineering Elsevier

Book Volume: 86

Pages Range: 1818-1821

DOI: 10.1016/j.mee.2009.03.076

Abstract

A broad compositional range of the dielectric material Zr1$-$xHfxO2 was evaluated with respect to its applicability in DRAM storage capacitors. The paper reports on phase composition, crystallization behavior, and electrical properties of the mixed system in planar metal-insulator-metal (MIM) capacitors. Admixture of HfO2 into ZrO2 proved to stabilize the deposition process at high temperatures without degrading the dielectric properties of the film. Compared to pure ZrO2 the 30--40% HfO2 containing films showed improved scalability (capacitance equivalent thickness 0.73~nm at 8~*~10$-$9~A/cm2) as well as improved reliability.

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Fraunhofer-Institut für Photonische Mikrosysteme (IPMS) / Fraunhofer Institute for Photonic Microsystems DE Germany (DE) Qimonda AG DE Germany (DE)

How to cite

APA:

Mueller, J., Boescke, T.S., Schroeder, U., Reinicke, M., Oberbeck, L., Zhou, D.,... Frey, L. (2009). Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition. Microelectronic Engineering, 86, 1818-1821. https://doi.org/10.1016/j.mee.2009.03.076

MLA:

Mueller, J., et al. "Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition." Microelectronic Engineering 86 (2009): 1818-1821.

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