Dr. Elke Meißner

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Lehrstuhl für Elektronische Bauelemente

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(2)

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(1)

Publications

(9)

X-Ray diffraction analysis and modeling of the depth profile of lattice strains in AlGaN stacks (2021) Rafaja D, Fischer P, Barchuk M, Motylenko M, Roeder C, Besendoerfer S, Meißner E Journal article The long journey from crystal growth to power devices, the role of materials development for III-Nitride semiconductors (2021) Meißner E, Besendörfer S, Faraji S, Bahat-Treidel E, Würfl J Conference contribution Ammonothermal Materials (2021) Schnick W, Cordes N, Mallmann M, Niewa R, Meißner E Book chapter / Article in edited volumes A New Perspective on Growth of GaN from the Basic Ammonothermal Regime (2021) Meißner E, Jockel D, Koch M, Niewa R Book chapter / Article in edited volumes In-situ preparation of gan sacrificial layers on sapphire substrate in movpe reactor for self-separation of the overgrown gan crystal (2020) Faraji S, Meißner E, Weingärtner R, Besendörfer S, Friedrich J Journal article The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors (2020) Besendörfer S, Meißner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T Journal article X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals (2020) Wicht T, Mueller S, Weingaertner R, Epelbaum B, Besendoerfer S, Blaess U, Weißer M, et al. Journal article Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures (2020) Besendörfer S, Meißner E, Zweipfennig T, Yacoub H, Fahle D, Behmenburg H, Kalisch H, et al. Journal article Vertical breakdown of GaN on Si due to V-pits (2020) Besendörfer S, Meißner E, Tajalli A, Meneghini M, Freitas JA, Derluyn J, Medjdoub F, et al. Journal article