Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs

Garbe V, Seidel S, Schmid A, Bläß U, Meissner E, Heitmann J (2023)

Publication Type: Journal article

Publication year: 2023

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 123

Article Number: 203506

Journal Issue: 20

DOI: 10.1063/5.0171168

Abstract

We report on the electrical and microstructural characterization of an Au-free V/Al/Ti/TiN ohmic contact for AlGaN/GaN heterostructures. Ultra-low contact resistance and specific contact resistivity of Rc < 0.1 Ω mm and ρc < 2.4 × 10⁻⁷ Ω cm² have been achieved with very low RMS surface roughness. This was accomplished at a comparably low annealing temperature of 800 °C and without applying any contact recess, regrowth, or implantation process. High electron mobility transistors were fabricated and a comparison of the electrical performance with state-of-the-art Ti/Al/Ti/TiN and Ti/Al/Ni/Au contacts was made. The contact formation mechanism is discussed on the basis of microstructural features.

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Germany (DE) Technische Universität Bergakademie Freiberg

Germany (DE)

How to cite

APA:

Garbe, V., Seidel, S., Schmid, A., Bläß, U., Meissner, E., & Heitmann, J. (2023). Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs. Applied Physics Letters, 123(20). https://dx.doi.org/10.1063/5.0171168

MLA:

Garbe, Valentin, et al. "Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs." Applied Physics Letters 123.20 (2023).

BibTeX: Download