Dr. Michael Krieger

Chair of Applied Physics (LAP)

A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel (2012) Krach F, Hertel S, Waldmann D, Jobst J, Krieger M, Reshanov S, Schoner A, Weber HB Journal article, Letter Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects? (2012) Zippelius B, Glas A, Weber HB, Pensl G, Kimoto T, Krieger M Journal article, Letter Bottom-gated epitaxial graphene (2011) Waldmann D, Jobst J, Speck F, Seyller T, Krieger M, Weber HB Journal article, Letter Current annealing and electrical breakdown of epitaxial graphene (2011) Hertel S, Kißlinger F, Jobst J, Waldmann D, Krieger M, Weber HB Journal article, Letter Silicon Carbide and Related Materials 2009 - Parts 1 and 2 (2010) Bauer A, Friedrichs P, Krieger M, Pensl G, Rupp R, Seyller T Edited Volume Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors (2008) Krieger M, Beljakowa S, Trapaidze L, Frank T, Weber HB, Pensl G, Hatta N, et al. Journal article Growth of cubic SiC single crystals by the physical vapor transport technique (2007) Semmelroth K, Krieger M, Pensl G, Nagasawa H, Püsche R, Hundhausen M, Ley L, et al. Journal article Impurity Conduction in Silicon Carbide (2007) Krieger M, Semmelroth K, Weber HB, Pensl G, Rambach M, Frey L Journal article Implantation and Annealing of Aluminum in 4H Silicon Carbide (2005) Rambach M, Schmid F, Krieger M, Frey L, Bauer A, Pensl G, Ryssel H Journal article Growth of 3C-SiC Bulk Material by the Modified Lely-Method (2004) Krieger M, Hundhausen M, Ley L Journal article