Growth of 3C-SiC Bulk Material by the Modified Lely-Method

Krieger M, Hundhausen M, Ley L (2004)

Publication Type: Journal article

Publication year: 2004


Publisher: Trans Tech Publications

Book Volume: 457-460

Pages Range: 151


The growth of cubic 3C-SiC single crystals by the modified Lely method is reported. Free-standing 200μm thick 3C-SiC epilayers were employed as seed crystals. The source material consisted of stoichiometric SiC; in addition, a separate Si source was deposited in the furnace at a temperature of about 1500°C. The temperature of the seed crystal was kept in the range of (1850-1950)°C. The growth rate is equal to 0.05mm/h and a nitrogen donor concentration of (2-6) ×1018 cm-3 is determined in the grown 3C-SiC.

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Krieger, M., Hundhausen, M., & Ley, L. (2004). Growth of 3C-SiC Bulk Material by the Modified Lely-Method. Materials Science Forum, 457-460, 151.


Krieger, Michael, Martin Hundhausen, and Lothar Ley. "Growth of 3C-SiC Bulk Material by the Modified Lely-Method." Materials Science Forum 457-460 (2004): 151.

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