Julian Dobusch

Professur für Elektromagnetische Felder Lehrstuhl für Optoelektronik

In-Depth Study of the Parasitic Capacitances of a Half-bridge Circuit (2023) Faber S, Kohlhepp B, Dobusch J, Kaiser J, Dürbaum T Conference contribution, Conference Contribution Radio Disturbance Evaluation of Si-and GaN-Inverters (2023) Kohlhepp B, Dobusch J, Kübrich D, Dürbaum T Conference contribution Common Mode of Inverters: Survey and Study of Filter Placement on Grid and Load Side (2022) Kohlhepp B, Dobusch J, Kübrich D, Dürbaum T Conference contribution Evaluating EMI of Unshielded Cables in High Frequency GaN Inverter Application (2021) Dobusch J, Kübrich D, Dürbaum T, Diepold F Conference contribution How to choose the optimal gan-hemt for a hard switching application – a guide (2021) Dobusch J, Schwanninger R, Kohlhepp B, Dürbaum T Conference contribution Novel approach to model gan-hemt capacitances using sigmoid functions (2021) Dobusch J, Schwanninger R, Dürbaum T Conference contribution EMC Focused SiC Half-Bridge Modeling in the Frequency Domain: Procedure, advantages and limitations (2020) Dobusch J, Dürbaum T Conference contribution EMC Focused Half-Bridge Characterization and Modeling (2019) Dobusch J, Konarski P, Kübrich D, Dürbaum T Conference contribution Linearity evaluation of voltage-based drive side three-phase CM/DM separation (2019) Dobusch J, Kübrich D, Dürbaum T Conference contribution, Conference Contribution Measuring parasitic resistance of resonant converters output capacitor through transfer functions (2019) Dobusch J, Dürbaum T Conference contribution