Dr.-Ing. Ulrike Künecke

Institute Materials for Electronics and Energy Technology (i-MEET) Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Determination of material inhomogeneities in CuIn(Se,S)(2) solar cell materials by high resolution cathodoluminescence topography (2010) Oehlschläger F, Müller J, Künecke U, Hoelzing A, Schurr R, Hock R, Wellmann P Journal article, Original article Germanium Incorporation during PVT Bulk Growth of Silicon Carbide (2009) Hens P, Künecke U, Konias K, Hock R, Wellmann P Journal article, Original article Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum (2009) Hens P, Künecke U, Wellmann P Journal article, Original article Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution (2008) Sakwe A, Stockmeier M, Hens P, Müller R, Queren D, Künecke U, Konias K, et al. Journal article Bulk growth of SiC (2008) Wellmann P, Müller R, Sakwe A, Künecke U, Hens P, Stockmeier M, Konias K, et al. Journal article, Original article Growth of silicon carbide bulk crystals with a modified physical vapor transport technique (2006) Müller R, Künecke U, Queren D, Sakwe A, Wellmann P Journal article Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping (2006) Künecke U, Wellmann P Journal article Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method (2006) Contreras S, Zielinski M, Konczewicz L, Blanc C, Juillaguet S, Müller R, Künecke U, et al. Journal article, Original article Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering (2006) Müller R, Künecke U, Thuaire A, Mermoux M, Pons M, Wellmann P Journal article Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC (2006) Wellmann P, Queren D, Müller R, Sakwe A, Künecke U Journal article, Original article