Dr.-Ing. Saskia Schimmel

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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Abstract

Journal

Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitrides (2016) Schimmel S, Künecke U, Meisel M, Hertweck B, Steigerwald T, Nebel C, Alt N, et al. Journal article, Original article Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolution (2015) Schimmel S, Lindner M, Steigerwald T, Hertweck B, Richter TM, Künecke U, Alt N, et al. Journal article, Original article Ceramic liner technology for ammonoacidic synthesis (2015) Hertweck B, Schimmel S, Steigerwald T, Alt N, Wellmann P, Schlücker E Journal article, Original article Advances in wide bandgap SiC for optoelectronics (2014) Ou H, Ou Y, Argyraki A, Schimmel S, Kaiser M, Wellmann P, Linnarsson MK, et al. Journal article In Situ Visualization of GaN Crystals in Ammonothermal High Pressure Autoclaves by X-ray Imaging (2014) Schimmel S, Künecke U, Steigerwald T, Hertweck B, Alt N, Schlücker E, Wellmann P Conference contribution, Abstract of a poster Nucleation and growth of polycrystalline SiC (2014) Kaiser M, Schimmel S, Jokubavicius V, Linnarsson MK, Ou H, Syväjärvi M, Wellmann P Journal article Towards X-ray in-situ visualization of ammonothermal crystal growth of nitrides (2014) Schimmel S, Künecke U, Baser HH, Steigerwald T, Hertweck B, Alt N, Schlücker E, et al. Journal article The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy (2014) Schimmel S, Kaiser M, Jokubavicius V, Ou Y, Hens P, Linnarsson MK, Sun J, et al. Journal article Towards bulk-like 3C-SiC growth using low off-axis substrates (2013) Jokubavicius V, Huang HH, Schimmel S, Liljedahl R, Yakimova R, Syväjärvi M Journal article Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates (2013) Schimmel S, Kaiser M, Hens P, Jokubavicius V, Liljedahl R, Sun J, Yakimova R, et al. Journal article, Original article
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