Dr.-Ing. Saskia Schimmel

Lehrstuhl für Elektronische Bauelemente

Growth kinetics - a key aspect of every semiconductor synthesis (2025) Chatterjee A, Wostatek T, Schimmel S Conference contribution, Abstract of a poster Emerging research directions in the field of nitride semiconductors (2025) Wostatek T, Civas EN, Zheng J, Chirala VYMR, Schimmel S Conference contribution, Abstract of a poster Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential (2024) Wostatek T, Chirala VYMR, Stoddard N, Civas EN, Pimputkar S, Schimmel S Journal article, Review article Nitride semiconductor crystal growth at FAU Erlangen-Nürnberg (2024) Wostatek T, Schimmel S Conference contribution, Abstract of a poster Transition from etch-back to growth conditions during ammonothermal growth of GaN – a transient numerical model for convective flow and temperature distribution in a retrograde solubility configuration (2024) Schimmel S, Tomida D, Ishiguro T, Honda Y, Chichibu SF, Amano H Conference contribution, Abstract of a poster Fundamentals of ammonothermal growth of nitride crystals (2024) Chirala VYMR, Schimmel S Conference contribution, Abstract of a poster Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions (2023) Schimmel S, Tomida D, Ishiguro T, Honda Y, Chichibu SF, Amano H Journal article Junior Research Group on Nitride Semiconductors (2023) Schimmel S Conference contribution, Abstract of a poster Artificial Intelligence for Crystal Growth and Characterization (2022) Schimmel S, Sun W, Dropka N Journal article High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors-A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN (2022) Schimmel S, Salamon M, Tomida D, Neumeier S, Ishiguro T, Honda Y, Chichibu SF, Amano H Journal article