Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics

Research facility

Location: Frankfurt (Oder), Germany (DE)

ISNI: 0000000101426781

ROR: https://ror.org/0489gab80

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Publications

(39)

Research Grants

(5)

Growth and characterization of SiGeSn quantum well photodiodes (2015) Fischer IA, Wendav T, Augel L, Jitpakdeebodin S, Oliveira F, Benedetti A, Stefanov S, et al. Journal article Highly Integrated Dual-Band Digital Beamforming Synthetic Aperture Radar (2015) Patyuchenko A, Younis M, Krieger G, Wang Z, Gao S, Qin F, Mao C, et al. Conference contribution CMOS-compatible optical switching concept based on strain-induced refractive-index tuning (2015) Virgilio M, Witzigmann B, Bolognini G, Guha S, Schroeder T, Capellini G Journal article Graphene grown on Ge(001) from atomic source (2014) Lippert G, Dabrowski J, Schroeder T, Schubert MA, Yamamoto Y, Herziger F, Maultzsch J, et al. Journal article GeSn/Ge multiquantum well photodetectors on Si substrates (2014) Oehme M, Widmann D, Kostecki K, Zaumseil P, Schwartz B, Gollhofer M, Koerner R, et al. Journal article Molecular beam growth of micrometer-size graphene on mica (2013) Lippert G, Dabrowski J, Yamamoto Y, Herziger F, Maultzsch J, Lemme MC, Mehr W, Lupina G Journal article Molecular beam epitaxy of graphene on mica (2012) Lippert G, Dabrowski J, Yamamoto Y, Herziger F, Maultzsch J, Baringhaus J, Tegenkamp C, et al. Journal article Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes (2012) Kasper E, Oehme M, Arguirov T, Werner J, Kittler M, Schulze J Journal article Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si (2011) Arguirov T, Kittler M, Oehme M, Abrosimov NV, Kasper E, Schulze J Conference contribution

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