Journal article
(Letter)


Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects?


Publication Details
Author(s): Zippelius B, Glas A, Weber HB, Pensl G, Kimoto T, Krieger M
Publisher: Trans Tech Publications
Publication year: 2012
Volume: 717-720
Pages range: 251-254
ISSN: 0255-5476
eISSN: 1662-9752

Abstract

Deep Level Transient Spectroscopy (DLTS) and Double-correlated DLTS (DDLTS) measurements have been conducted on Schottky contacts fabricated on n-type 4H-SiC epilayers using different contact metals in order to separate the EH6- and EH7-centers, which usually appear as a broad double peak in DLTS spectra. The activation energy of EH6 (E-C - E-T(EH6) = 1.203 eV) turns out to be independent of the electric field. As a consequence, EH6 is likely to be acceptor-like according to the missing Poole-Frenkel effect. In this case, it can be excluded that the EH6-center and the prominent acceptor-like Z(1/2)-center belong to different charge states of the same microscopic defect as theoretically suggested. It is proposed that EH6 is a complex containing a carbon vacancy and another component available at high concentrations. The activation energy of EH7 (E-C - E-r(EH7) = 1.58 eV) has been evaluated indirectly by fitting the DLTS spectra of the EH6/7 double peak taking the previously determined parameters of EH6 into account.



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How to cite
APA: Zippelius, B., Glas, A., Weber, H.B., Pensl, G., Kimoto, T., & Krieger, M. (2012). Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects? Materials Science Forum, 717-720, 251-254. https://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.251

MLA: Zippelius, Bernd, et al. "Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects?" Materials Science Forum 717-720 (2012): 251-254.

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