Conference contribution


Electronic Raman Studies of Shallow Donors in Silicon Carbide


Publication Details
Author(s): Püsche R, Hundhausen M, Ley L, Semmelroth K, Pensl G, Desperrier P, Wellmann P, Haller EE, Ager J, Starke U
Editor(s): Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Publisher: Trans Tech Publications
Publication year: 2006
Volume: 527-529
Conference Proceedings Title: Materials Science Forum (Volumes 527-529)
Pages range: 579
ISSN: 0255-5476
eISSN: 1662-9752

Event details
Event: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005)
Event location: Pittsburgh, Pennsylvania
Start date of the event: 18/09/2005
End date of the event: 23/09/2005
Language: English

Abstract

We study electronic Raman scattering of phosphorus and nitrogen doped silicon carbide (SiC) as a function of temperature in the range 7 K < T < 300K. We observe a series of peaks in the Raman spectra which we assign to electronic transitions at nitrogen and phosphorus donors on different lattice sites. These transitions are identified as valley orbit transitions of the Is donor ground state. From the polarization dependence of the observed peaks, we find that all electronic Raman signals have E2-symmetry of C 6v for the hexagonal polytypes (6H-SiC and 4H-SiC) and E-syinmetry of C3., for 15R-SiC. Wc find a reduction of the intensities of all valley-orbit Raman signals with increasing temperature and ascribe this reduction to the decreasing occupation of donor states.



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How to cite
APA: Püsche, R., Hundhausen, M., Ley, L., Semmelroth, K., Pensl, G., Desperrier, P.,... Starke, U. (2006). Electronic Raman Studies of Shallow Donors in Silicon Carbide. In Robert P. Devaty, David J. Larkin and Stephen E. Saddow (Eds.), Materials Science Forum (Volumes 527-529) (pp. 579). Pittsburgh, Pennsylvania, US: Trans Tech Publications.

MLA: Püsche, Roland, et al. "Electronic Raman Studies of Shallow Donors in Silicon Carbide." Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Pittsburgh, Pennsylvania Ed. Robert P. Devaty, David J. Larkin and Stephen E. Saddow, Trans Tech Publications, 2006. 579.

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