Journal article

Deactivation of nitrogen donors in silicon carbide

Publication Details
Author(s): Schmid F, Pensl G, Bockstedte MG, Mattausch A, Pankratov O, Ohshima T, Itoh H, Weber HB, Reshanov S
Publisher: American Physical Society
Publication year: 2006
Volume: B 74
Pages range: 245212
ISSN: 1098-0121


Hexagonal SiC is either co-implanted with silicon (Si+), carbon (C+), or neon (Ne+) ions along with nitrogen (N+) ions or irradiated with electrons (e-) of 200 keV energy. During the subsequent annealing step at temperatures above 1450°C a deactivation of N donors and a reduction of the compensation are observed in the case of the Si+/N+ co-implantation and e- irradiation. The N donor deactivation is investigated as a function of the concentration of the co-implanted species and the annealing temperature. The formation of energetically deep defects is analyzed with deep level transient spectroscopy. A detailed theoretical analysis based on the density functional theory is conducted; it takes into account the kinetic mechanisms for the formation of N interstitial clusters and (N-vacancy) complexes. In accordance with all the experimental results, this analysis distinctly indicates that the (NC) 4 - VSi complex, which is thermally stable at high temperatures and which has no level in the band gap of 4H-SiC, is responsible for the N donor deactivation. © 2006 The American Physical Society.

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How to cite
APA: Schmid, F., Pensl, G., Bockstedte, M.G., Mattausch, A., Pankratov, O., Ohshima, T.,... Reshanov, S. (2006). Deactivation of nitrogen donors in silicon carbide. Physical Review B, B 74, 245212.

MLA: Schmid, Frank, et al. "Deactivation of nitrogen donors in silicon carbide." Physical Review B B 74 (2006): 245212.

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