Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by photoluminescence and differential interference contrast mapping
Kocher M, Schlichting H, Kallinger B, Rommel M, Bauer AJ, Erlbacher T (2020)
Publication Type: Conference contribution
Publication year: 2020
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 1004 MSF
Pages Range: 299-305
Conference Proceedings Title: Materials Science Forum
Event location: Kyoto
ISBN: 9783035715798
DOI: 10.4028/www.scientific.net/MSF.1004.299
Abstract
In this study, UV Photoluminescence (UVPL) and Differential Interference Contrast (DIC) mapping was applied for process control of a 1.2 kV 4H-SiC VDMOS fabrication process at different process stages in order to investigate the influence of shallow pits on the electrical behavior of the devices. In particular, it could be shown that UVPL and DIC mapping allows the correlation of shallow pits and the occurrence of darker regions in the UVPL images and distinguishing differently implanted regions at distinct process stages. By comparing the darker regions of the UVPL scan with the electrical blocking characteristics of the associated devices a direct correlation between the occurrence of shallow pits and the reduction of the blocking capability of the devices could be observed.
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Germany (DE)How to cite
APA:
Kocher, M., Schlichting, H., Kallinger, B., Rommel, M., Bauer, A.J., & Erlbacher, T. (2020). Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by photoluminescence and differential interference contrast mapping. In Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Eds.), Materials Science Forum (pp. 299-305). Kyoto, JP: Trans Tech Publications Ltd.
MLA:
Kocher, Matthias, et al. "Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by photoluminescence and differential interference contrast mapping." Proceedings of the 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019, Kyoto Ed. Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka, Trans Tech Publications Ltd, 2020. 299-305.
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