Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes
Rusch O, Moult J, Erlbacher T (2019)
Publication Type: Conference contribution
Publication year: 2019
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 963 MSF
Pages Range: 549-552
Conference Proceedings Title: Materials Science Forum
Event location: Birmingham
ISBN: 9783035713329
DOI: 10.4028/www.scientific.net/MSF.963.549
Abstract
This work presents a design study of customized p+ arrays having influence on the electrical properties of manufactured 4H-SiC Junction Barrier Schottky (JBS) diodes with designated electrical characteristics of 5 A forward and 650 V blocking capabilities. The effect of the Schottky area consuming p+ grid on the forward voltage drop, the leakage current and therefore the breakdown voltage was investigated. A recessed p+ implantation, realized through trench etching before implanting the bottom of the trenches, results in a more effective shielding of the electrical field at the Schottky interface and therefore reduces the leakage current. Customizing the p+ grid array in combination with the trench structure, various JBS diode variants with active areas of 1.69 mm2 were fabricated whereas forward voltage drops of 1.58 V @ 5 A with blocking capabilities up to 1 kV were achieved.
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Germany (DE)How to cite
APA:
Rusch, O., Moult, J., & Erlbacher, T. (2019). Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 549-552). Birmingham, GB: Trans Tech Publications Ltd.
MLA:
Rusch, Oleg, Jonathan Moult, and Tobias Erlbacher. "Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes." Proceedings of the 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, Birmingham Ed. Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield, Trans Tech Publications Ltd, 2019. 549-552.
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