Channeling in 4H-SiC from an application point of view
Pichler P, Sledziewski T, Häublein V, Bauer AJ, Erlbacher T (2019)
Publication Type: Conference contribution
Publication year: 2019
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 963 MSF
Pages Range: 386-389
Conference Proceedings Title: Materials Science Forum
Event location: Birmingham
ISBN: 9783035713329
DOI: 10.4028/www.scientific.net/MSF.963.386
Abstract
During ion implantation into monocrystalline semiconductors, some of the implanted atoms will be deflected to crystal directions along which they may penetrate deeply into the crystal. We investigate such channeling effects for Al and N implantation into 4H-SiC by Monte Carlo simulations. The focus of the work is on the effects of channeling on doping profiles, the relevance for the net doping of typical power electronic devices, and the influence of scattering oxides.
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Germany (DE)How to cite
APA:
Pichler, P., Sledziewski, T., Häublein, V., Bauer, A.J., & Erlbacher, T. (2019). Channeling in 4H-SiC from an application point of view. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 386-389). Birmingham, GB: Trans Tech Publications Ltd.
MLA:
Pichler, Peter, et al. "Channeling in 4H-SiC from an application point of view." Proceedings of the 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, Birmingham Ed. Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield, Trans Tech Publications Ltd, 2019. 386-389.
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