Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals

Arzig M, Steiner J, Salamon M, Uhlmann N, Wellmann P (2019)

Publication Type: Journal article

Publication year: 2019

Journal

Materials MDPI

Book Volume: 12

Article Number: 2591

Journal Issue: 16

DOI: 10.3390/ma12162591

Abstract

In this study, the change of mass distribution in a source material is tracked using an in situ computer tomography (CT) setup during the bulk growth of 4H- silicon carbide (SiC) via physical vapor depostion (PVT). The changing properties of the source material due to recrystallization and densification are evaluated. Laser flash measurement showed that the thermal properties of different regions of the source material change significantly before and after the growth run. The Si-depleted area at the bottom of the crucible is thermally insulating, while the residual SiC source showed increased thermal conductivity compared to the initially charged powder. Ex situ CT measurements revealed a needle-like structure with elongated pores causing anisotropic behavior for the heat conductivity. Models to assess the thermal conductivity are applied in order to calculate the changes in the temperature field in the crucible and the changes in growth kinetics are discussed.

Authors with CRIS profile

Matthias Arzig Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Johannes Steiner Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Arzig, M., Steiner, J., Salamon, M., Uhlmann, N., & Wellmann, P. (2019). Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals. Materials, 12(16). https://dx.doi.org/10.3390/ma12162591

MLA:

Arzig, Matthias, et al. "Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals." Materials 12.16 (2019).

BibTeX: Download