Electronic Raman Studies of Shallow Donors in Silicon Carbide

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autor(en): Püsche R, Hundhausen M, Ley L, Semmelroth K, Pensl G, Desperrier P, Wellmann P, Haller EE, Ager J, Starke U
Zeitschrift: Materials Science Forum
Jahr der Veröffentlichung: 2006
Band: 527-529
Tagungsband: Materials Science Forum (Volumes 527-529)
Seitenbereich: 579
ISSN: 0255-5476
eISSN: 1662-9752
Sprache: Englisch


Abstract


We study electronic Raman scattering of phosphorus and nitrogen doped silicon carbide (SiC) as a function of temperature in the range 7 K < T < 300K. We observe a series of peaks in the Raman spectra which we assign to electronic transitions at nitrogen and phosphorus donors on different lattice sites. These transitions are identified as valley orbit transitions of the Is donor ground state. From the polarization dependence of the observed peaks, we find that all electronic Raman signals have E2-symmetry of C 6v for the hexagonal polytypes (6H-SiC and 4H-SiC) and E-syinmetry of C3., for 15R-SiC. Wc find a reduction of the intensities of all valley-orbit Raman signals with increasing temperature and ascribe this reduction to the decreasing occupation of donor states.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Autor(en) der externen Einrichtung(en)
University of California, Berkeley


Zitierweisen

APA:
Püsche, R., Hundhausen, M., Ley, L., Semmelroth, K., Pensl, G., Desperrier, P.,... Starke, U. (2006). Electronic Raman Studies of Shallow Donors in Silicon Carbide. Materials Science Forum, 527-529, 579. https://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.579

MLA:
Püsche, Roland, et al. "Electronic Raman Studies of Shallow Donors in Silicon Carbide." Materials Science Forum 527-529 (2006): 579.

BibTeX: 

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