Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices

Weiße J, Hauck M, Sledziewski T, Tschiesche M, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T (2018)

Publication Language: English

Publication Type: Journal article, Report

Publication year: 2018

Journal

Edited Volumes: Materials Science Forum

Book Volume: 924

Pages Range: 184-187

DOI: 10.4028/www.scientific.net/MSF.924.184

Abstract

In this work, we analyze compensating defects which are formed after implantation of aluminum (Al) into n-type 4H-SiC epitaxial layers and subsequent thermal annealing. These defects reduce the expected free charge carrier density by 84% for a low doped layer with [Al]_impl ≈ 9ž·10¹⁶ cm^-3 and by 27 % for a high doped layer with [Al]_impl ≈ 2·ž10¹⁹ cm^-3. Furthermore, an electrical activation ratio of implanted aluminum ions of 100 % is calculated. The ionization energy of implanted aluminum as measured by Hall effect and admittance spectroscopy ranges from 101 meV to 305 meV depending on the doping concentration.

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Related research project(s)

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) Germany (DE)

How to cite

APA:

Weiße, J., Hauck, M., Sledziewski, T., Tschiesche, M., Krieger, M., Bauer, A.,... Erlbacher, T. (2018). Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices. Materials Science Forum, 924, 184-187. https://doi.org/10.4028/www.scientific.net/MSF.924.184

MLA:

Weiße, Julietta, et al. "Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices." Materials Science Forum 924 (2018): 184-187.

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