Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-doped Silicon by Comparison of Simulation and Measurement
Rommel M, Bauer A, Ryssel H (2008)
Publication Type: Journal article
Publication year: 2008
Journal
Book Volume: 155
Pages Range: H117
DOI: 10.1149/1.2819628
Abstract
In this work, an extensive injection-level-dependent carrier lifetime study on intentionally iron-contaminated boron-doped silicon has been performed by using the Elymat carrier lifetime method. The influence of both iron and boron concentrations is investigated. Results from both Elymat measurement modes are considered and critically compared to simulations and deep level transient spectroscopy measurements. The results clearly indicate that for low injection conditions, surface passivation with diluted hydrofluoric acid is not sufficient, whereas so-called electrostatic passivation allows for correct lifetime measurements. Results from both Elymat measurement modes are modeled consistently. The results prove that using optimized measurement and evaluation procedures, the Elymat method is an appropriate technique for the quantitative determination of iron in case of iron being the relevant contaminant in boron-doped silicon. © 2007 The Electrochemical Society.
Involved external institutions
Germany (DE)How to cite
APA:
Rommel, M., Bauer, A., & Ryssel, H. (2008). Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-doped Silicon by Comparison of Simulation and Measurement. Journal of The Electrochemical Society, 155, H117. https://doi.org/10.1149/1.2819628
MLA:
Rommel, Mathias, Anton Bauer, and Heiner Ryssel. "Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-doped Silicon by Comparison of Simulation and Measurement." Journal of The Electrochemical Society 155 (2008): H117.
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