Reduction of implantation-induced point defects by germanium ions in n-type 4H-SiC

Sledziewski T, Ellrott G, Rösch W, Weber HB, Krieger M (2015)

Publication Type: Journal article

Publication year: 2015

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Book Volume: 821-823

Pages Range: 347-350

ISBN: 9783038354789

DOI: 10.4028/www.scientific.net/MSF.821-823.347

Abstract

We have investigated the electrical properties of germanium-implanted n-type 4H-SiC epitaxial layers. Deep level transient spectroscopy (DLTS) was employed in order to study the influence of germanium ions on implantation-induced point defects. In particular, we observe a decrease of the concentration of Z1/2 defect with increasing dose of implanted germanium.

Authors with CRIS profile

Tomasz Sledziewski Chair of Applied Physics Günter Ellrott Professur für Angewandte Physik Willi Rösch Chair of Applied Physics Heiko Weber Chair of Applied Physics Michael Krieger Chair of Applied Physics

How to cite

APA:

Sledziewski, T., Ellrott, G., Rösch, W., Weber, H.B., & Krieger, M. (2015). Reduction of implantation-induced point defects by germanium ions in n-type 4H-SiC. Materials Science Forum, 821-823, 347-350. https://doi.org/10.4028/www.scientific.net/MSF.821-823.347

MLA:

Sledziewski, Tomasz, et al. "Reduction of implantation-induced point defects by germanium ions in n-type 4H-SiC." Materials Science Forum 821-823 (2015): 347-350.

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