Slew rate control of a 600 V 55 mΩ GaN cascode

Conference contribution
(Conference Contribution)


Publication Details

Author(s): Endruschat A, Heckel T, Reiner R, Waltereit P, Quay R, Ambacher O, März M, Eckardt B, Frey L
Editor(s): IEEE
Publisher: Institute of Electrical and Electronics Engineers Inc.
Publication year: 2016
Pages range: 334-339
ISBN: 978-1-5090-1576-4
Language: English


Abstract


This paper presents a 600 V, 55 m Omega GaN cascode with slew rate control. The time constants of cascodes which determine the switching speed are analyzed, discussed and verified by time domain simulations. Clamped inductive switching measurements of commercial and a custom-built GaN cascodes prove the applicability of the switching speed control mechanisms with additional passive components. The gathered experiences are applied to a custom-built modular cascode, which shows simple switching speed controllability by utilizing a standard gate drive.


FAU Authors / FAU Editors

Endruschat, Achim
Lehrstuhl für Leistungselektronik
Frey, Lothar Prof. Dr.
Lehrstuhl für Elektronische Bauelemente
Heckel, Thomas
Lehrstuhl für Elektronische Bauelemente
März, Martin Prof. Dr.
Technische Fakultät


External institutions with authors

Albert-Ludwigs-Universität Freiburg
Fraunhofer-Institut für Angewandte Festkörperphysik (IAF) / Fraunhofer Institute for Applied Solid State Physics
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)


How to cite

APA:
Endruschat, A., Heckel, T., Reiner, R., Waltereit, P., Quay, R., Ambacher, O.,... Frey, L. (2016). Slew rate control of a 600 V 55 mΩ GaN cascode. In IEEE (Eds.), Proceedings of the 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016 (pp. 334-339). Fayetteville, AR, US: Institute of Electrical and Electronics Engineers Inc..

MLA:
Endruschat, Achim, et al. "Slew rate control of a 600 V 55 mΩ GaN cascode." Proceedings of the 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016, Fayetteville, AR Ed. IEEE, Institute of Electrical and Electronics Engineers Inc., 2016. 334-339.

BibTeX: 

Last updated on 2019-09-07 at 08:58