Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – Simulation and characterization

Matthus C, Erlbacher T, Burenkov A, Bauer A, Frey L (2016)


Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2016

Journal

Publisher: Trans Tech Publications Ltd

Book Volume: 858

Pages Range: 1032-1035

ISBN: 9783035710427

DOI: 10.4028/www.scientific.net/MSF.858.1032

Abstract

This paper describes the fabrication, characterization, and simulation of 4H-SiC pinphotodiodes for solar UV radiation detection. The devices were produced with an aluminum implanted emitter unlike most previously published detectors which use epitaxy for all applied doping regions (see e.g. [1,2]). They were electrically characterized at different temperatures with and without UV-illumination and afterwards a spectral analysis of the photocurrent was performed. A quantum efficiency up to 55% at 260 nm will be shown. Furthermore, the capability of the diodes for visible blind sun UV monitoring e.g. within a building, is demonstrated.

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How to cite

APA:

Matthus, C., Erlbacher, T., Burenkov, A., Bauer, A., & Frey, L. (2016). Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – Simulation and characterization. Materials Science Forum, 858, 1032-1035. https://doi.org/10.4028/www.scientific.net/MSF.858.1032

MLA:

Matthus, Christian, et al. "Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – Simulation and characterization." Materials Science Forum 858 (2016): 1032-1035.

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