Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon: A Versatile Platform for Modern Optoelectronic Materials

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autorinnen und Autoren: Schmitt SW, Sarau G, Speich C, Doehler GH, Liu Z, Hao X, Rechberger S, Dieker C, Spiecker E, Prost W, Tegude FJ, Conibeer G, Green MA, Christiansen S
Zeitschrift: Advanced Optical Materials
Verlag: Wiley-VCH Verlag
Jahr der Veröffentlichung: 2018
ISSN: 2195-1071
Sprache: Englisch


Abstract


Metal organic vapor phase epitaxy is used to grow gallium arsenide (GaAs)


nanocrystals (NCs) on germanium (Ge) templates on nanoscopic silicon (Si)


threads prepared by reactive ion etching. Scanning transmission electron


microscopy with energy dispersive X-ray measurements shows an epitaxial


growth of the GaAs on the Ge template that is supported by the Si thread,


and that Ge doping is induced to the GaAs by the template. On Ge templates


of about 60 nm diameter, as-grown GaAs NCs show a very regular rhombic-


dodecahedral outer shape that can be explained by a preferential growth along


the <110> plane. Photoluminescence measurements of the Ge/GaAs structures


reveal radiative emission peaks on top of the GaAs band-to-band emission and at


sub-band gap energies. While high energy peaks are originating from Ge acceptor


levels in GaAs, sub-band gap peaks can be explained by radiation from Ge donor


and acceptor bands that are amplified by photonic modes hosted in the rhombic-


dodecahedral GaAs NCs. This study shows that a template-assisted crystal


growth at the nanoscale opens up routes for a versatile integration of strongly


emitting nanomaterials for a use in on-chip solid state lighting and photonics.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Dieker, Christel
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Rechberger, Stefanie Dr.
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Spiecker, Erdmann Prof. Dr.
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)


Zusätzliche Organisationseinheit(en)
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Graduiertenkolleg 1896/2 In situ Mikroskopie mit Elektronen, Röntgenstrahlen und Rastersonden
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)


Einrichtungen weiterer Autorinnen und Autoren

Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
University of New South Wales (UNSW)


Zitierweisen

APA:
Schmitt, S.W., Sarau, G., Speich, C., Doehler, G.H., Liu, Z., Hao, X.,... Christiansen, S. (2018). Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon: A Versatile Platform for Modern Optoelectronic Materials. Advanced Optical Materials. https://dx.doi.org/10.1002/adom.201701329

MLA:
Schmitt, Sebastian W., et al. "Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon: A Versatile Platform for Modern Optoelectronic Materials." Advanced Optical Materials (2018).

BibTeX: 

Zuletzt aktualisiert 2019-27-05 um 17:04