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@article{faucris.107128164,
abstract = {
Metal organic vapor phase epitaxy is used to grow gallium arsenide (GaAs)
nanocrystals (NCs) on germanium (Ge) templates on nanoscopic silicon (Si)
threads prepared by reactive ion etching. Scanning transmission electron
microscopy with energy dispersive X-ray measurements shows an epitaxial
growth of the GaAs on the Ge template that is supported by the Si thread,
and that Ge doping is induced to the GaAs by the template. On Ge templates
of about 60 nm diameter, as-grown GaAs NCs show a very regular rhombic-
dodecahedral outer shape that can be explained by a preferential growth along
the <110> plane. Photoluminescence measurements of the Ge/GaAs structures
reveal radiative emission peaks on top of the GaAs band-to-band emission and at
sub-band gap energies. While high energy peaks are originating from Ge acceptor
levels in GaAs, sub-band gap peaks can be explained by radiation from Ge donor
and acceptor bands that are ampliļ¬ed by photonic modes hosted in the rhombic-
dodecahedral GaAs NCs. This study shows that a template-assisted crystal
growth at the nanoscale opens up routes for a versatile integration of strongly
emitting nanomaterials for a use in on-chip solid state lighting and photonics.
},
author = {Schmitt, Sebastian W. and Sarau, George and Speich, Claudia and Doehler, Gottfried H. and Liu, Ziheng and Hao, Xiaojing and Rechberger, Stefanie and Dieker, Christel and Spiecker, Erdmann and Prost, Werner and Tegude, Franz-Josef and Conibeer, Gavin and Green, Martin A. and Christiansen, Silke},
doi = {10.1002/adom.201701329},
faupublication = {yes},
journal = {Advanced Optical Materials},
keywords = {Gallium arsenide; Germanium; Nanocrystals; Photoluminescence; Photonics},
peerreviewed = {Yes},
title = {{Germanium} {Template} {Assisted} {Integration} of {Gallium} {Arsenide} {Nanocrystals} on {Silicon}: {A} {Versatile} {Platform} for {Modern} {Optoelectronic} {Materials}},
year = {2018}
}