Lanthanum implantation for threshold voltage control in metal/high-k devices

Fet A, Haeublein V, Bauer AJ, Ryssel H, Frey L (2009)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2009

Journal

Microelectronic Engineering Elsevier

Book Volume: 86

Pages Range: 1782-1785

DOI: 10.1016/j.mee.2009.03.042

Abstract

In this paper the tuning of the n-metal effective work function by implantation of lanthanum is demonstrated. The effect of implantation and thermal annealing on the device flat-band voltage is presented. It is shown that lanthanum doping of the gate stack produces a negative shift of the flat-band voltage of $-$0.53 V for a lanthanum does of 5~$\times$~1014 cm$-$2, after the device undergoes S/D anneal conditions. The results are discussed within the framework of a phenomenological dipole model and compared with other results

Authors with CRIS profile

Heiner Ryssel Technische Fakultät Lothar Frey Lehrstuhl für Elektronische Bauelemente

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Fet, A., Haeublein, V., Bauer, A.J., Ryssel, H., & Frey, L. (2009). Lanthanum implantation for threshold voltage control in metal/high-k devices. Microelectronic Engineering, 86, 1782-1785. https://doi.org/10.1016/j.mee.2009.03.042

MLA:

Fet, A., et al. "Lanthanum implantation for threshold voltage control in metal/high-k devices." Microelectronic Engineering 86 (2009): 1782-1785.

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