Influence of FIB patterning strategies on the shape of 3D structures: Comparison of experiments with simulations

Rommel M, Jambreck JD, Ebm C, Platzgummer E, Bauer AJ, Frey L (2010)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2010

Journal

Microelectronic Engineering Elsevier

Book Volume: 87

Pages Range: 1566-1568

DOI: 10.1016/j.mee.2009.10.054

Abstract

Today's focused ion beam (FIB) systems enable the fast and flexible fabrication of 3D structures with dimensions well below 100~nm. Due to secondary effects like redeposition of sputtered material, however, the fabrication of a targeted shape of the structure is not simple at all. In this work, the influence of the patterning strategy during the sputtering on the shape of a 3D structure with rotational symmetry is studied. Highly different shapes of 3D structures are achieved only due to different rastering strategies or duration times of the ion beam at each raster pixel. The final structure shape can be properly modeled with IonShaper∘ledR simulations. These results clearly prove that the selection of the patterning strategy is the key for appropriate FIB processing of 3D structures. Besides, it is shown that unconventional patterning strategies might enable new types of 3D shapes.

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) IMS Nanofabrication GmbH AT Austria (AT)

How to cite

APA:

Rommel, M., Jambreck, J.D., Ebm, C., Platzgummer, E., Bauer, A.J., & Frey, L. (2010). Influence of FIB patterning strategies on the shape of 3D structures: Comparison of experiments with simulations. Microelectronic Engineering, 87, 1566-1568. https://doi.org/10.1016/j.mee.2009.10.054

MLA:

Rommel, Mathias, et al. "Influence of FIB patterning strategies on the shape of 3D structures: Comparison of experiments with simulations." Microelectronic Engineering 87 (2010): 1566-1568.

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