Investigation of the reliability of 4H-SiC MOS devices for high temperature applications

Le-Huu M, Schmitt H, Noll S, Grieb M, Schrey FF, Bauer AJ, Frey L, Ryssel H (2011)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2011

Journal

Microelectronics Reliability Elsevier

Book Volume: 51

Pages Range: 1346-1350

Journal Issue: 8

DOI: 10.1016/j.microrel.2011.03.015

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Robert Bosch GmbH DE Germany (DE)

How to cite

APA:

Le-Huu, M., Schmitt, H., Noll, S., Grieb, M., Schrey, F.F., Bauer, A.J.,... Ryssel, H. (2011). Investigation of the reliability of 4H-SiC MOS devices for high temperature applications. Microelectronics Reliability, 51(8), 1346-1350. https://doi.org/10.1016/j.microrel.2011.03.015

MLA:

Le-Huu, Martin, et al. "Investigation of the reliability of 4H-SiC MOS devices for high temperature applications." Microelectronics Reliability 51.8 (2011): 1346-1350.

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