Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method

Stockmeier L, Kraner C, Fischer P, Epelbaum B, Reiman C, Friedrich J, Ramin G, Miller A (2019)

Publication Type: Journal article

Publication year: 2019

Journal

Journal of Crystal Growth Elsevier

Book Volume: 515

Pages Range: 26-31

DOI: 10.1016/j.jcrysgro.2019.03.009

Abstract

A contactless, non-destructive approach to measure the geometrical parameters of the growth ridge, based on surface topography, is presented and established. It allows a systematic, large scale analysis of growth ridges of single crystals of almost any type. Here, it is applied to Czochralski-grown silicon crystals. Based on the measurement results, Voronkov's theory of the shape of the growth ridge is verified. This theory is used to calculate the temperature gradient at the growth ridge from the geometrical parameters. The presented method gives an easy, direct experimental access to the thermal conditions, both qualitative and quantitative, at the solid-liquid interface during the growth process.

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Siltronic AG DE Germany (DE)

How to cite

APA:

Stockmeier, L., Kraner, C., Fischer, P., Epelbaum, B., Reiman, C., Friedrich, J.,... Miller, A. (2019). Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method. Journal of Crystal Growth, 515, 26-31. https://doi.org/10.1016/j.jcrysgro.2019.03.009

MLA:

Stockmeier, L., et al. "Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method." Journal of Crystal Growth 515 (2019): 26-31.

BibTeX: Download