Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autorinnen und Autoren: Schuh P, Künecke U, Litrico G, Mauceri M, La Via F, Monnoye S, Zielinski M, Wellmann P
Zeitschrift: Materials Science Forum
Jahr der Veröffentlichung: 2019
Band: 963
Seitenbereich: 149-152
ISSN: 0255-5476
eISSN: 1662-9752
Sprache: Englisch


Abstract

We present three different ways of transferring 3C-SiC layers grown on
silicon on top of a SiC carrier using a carbon glue layer. Our main
focus was upon the growth on the transition layer, as 3C-SiC does not
feature any polarities in the <100> or <-100> direction. We
realized a stable and reproducible process by following a wet chemical
approach, dealing with the difficulties of handling thin but
freestanding 3C-SiC layers. By using this way, we transferred
approximately 130 μm thick pieces using their horizontal hot-wall
reactor (M10), which were chemo mechanically polished and afterwards
fixed on our SiC carriers. Implementing such a seeding stack into our
growth setup, we managed to grow between 20 μm and 130 μm thick layers
on top. We have proven the possibility to grow on the transition layer.
Furthermore, we observed a slight reduction in protrusion density, which
is currently one of the main defects in such layers.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Künecke, Ulrike Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Schuh, Philipp
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Einrichtungen weiterer Autorinnen und Autoren

CNR Institute for Microelectronics and Microsystems (CNR-IMM)
E.T.C. (LPE Spa - Epitaxial Technology Center)
NOVASiC


Zitierweisen

APA:
Schuh, P., Künecke, U., Litrico, G., Mauceri, M., La Via, F., Monnoye, S.,... Wellmann, P. (2019). Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates. Materials Science Forum, 963, 149-152. https://dx.doi.org/10.4028/www.scientific.net/MSF.963.149

MLA:
Schuh, Philipp, et al. "Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates." Materials Science Forum 963 (2019): 149-152.

BibTeX: 

Zuletzt aktualisiert 2019-14-08 um 09:53