Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K

Matthus CD, Di Benedetto L, Kocher M, Bauer AJ, Licciardo GD, Rubino A, Erlbacher T (2019)

Publication Type: Journal article

Publication year: 2019

Journal

IEEE Sensors Journal Institute of Electrical and Electronics Engineers (IEEE)

Book Volume: 19

Pages Range: 2871-2878

Journal Issue: 8

DOI: 10.1109/JSEN.2019.2891293

Abstract

For the first time, we report on the performances of 411-SiC p-i-n-diode temperature sensors for operating temperatures between 20.5 and 802 K. In this huge temperature range, three ranges of performance were identified with the limit temperatures at 78.2 and 176.3 K. In each of these ranges, a different dominant current transport mechanism is shown and in this paper, a detailed analysis and discussion are reported. The sensor performances were extracted from VD-T characteristics at different fixed I-D values. In particular, at I-D =1 mu A and in the temperature range between 78.2 and 802 K, we found a sensor sensitivity of 2.3-3.4 mV/K with a rms temperature error, eT, of less than 4.2 K and the sensor shows an excellent linearity-quantified by the coefficient of determination R-2 higher than 0.9993. For even lower temperatures (below 78.2 K), low measurement currents like 10 nA are required leading to a sensitivity of 5.8 mV/K, but a lower linearity (R-2 = 0.9095) and an rms temperature error of 9.7 K which makes the sensor only partially usable in the temperature range between 20.5 and 78.2 K. Finally, the sensor performances are compared with other state-of-the-art solutions.

Authors with CRIS profile

Tobias Erlbacher Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Germany (DE) Università degli Studi di Salerno

Italy (IT)

How to cite

APA:

Matthus, C.D., Di Benedetto, L., Kocher, M., Bauer, A.J., Licciardo, G.D., Rubino, A., & Erlbacher, T. (2019). Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K. IEEE Sensors Journal, 19(8), 2871-2878. https://dx.doi.org/10.1109/JSEN.2019.2891293

MLA:

Matthus, Christian D., et al. "Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K." IEEE Sensors Journal 19.8 (2019): 2871-2878.

BibTeX: Download