Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires

Beitrag in einer Fachzeitschrift
(Letter)


Details zur Publikation

Autor(en): Connaughton S, Kolesnik-Gray M, Hobbs R, Lotty O, Holmes JD, Krstic V
Zeitschrift: Beilstein Journal of Nanotechnology
Verlag: Beilstein-Institut
Jahr der Veröffentlichung: 2016
Band: 7
Seitenbereich: 1284-1288
ISSN: 2190-4286
Sprache: Englisch


Abstract


The dependence of the resistivity with changing diameter of heavily-doped self-seeded germanium nanowires was studied for the diameter range 40 to 11 nm. The experimental data reveal an initial strong reduction of the resistivity with diameter decrease. At about 20 nm a region of slowly varying resistivity emerges with a peak feature around 14 nm. For diameters above 20 nm, nanowires


were found to be describable by classical means. For smaller diameters a quantum-based approach was required where we employed the 1D Kubo–Greenwood framework and also revealed the dominant charge carriers to be heavy holes. For both regimes the theoretical results and experimental data agree qualitatively well assuming a spatial spreading of the free holes towards the


nanowire centre upon diameter reduction.


FAU-Autoren / FAU-Herausgeber

Kolesnik-Gray, Maria Dr.
Lehrstuhl für Angewandte Physik
Krstic, Vojislav Prof. Dr.
Professur für Angewandte Physik


Autor(en) der externen Einrichtung(en)
Trinity College Dublin
University College Cork (UCC)


Zitierweisen

APA:
Connaughton, S., Kolesnik-Gray, M., Hobbs, R., Lotty, O., Holmes, J.D., & Krstic, V. (2016). Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires. Beilstein Journal of Nanotechnology, 7, 1284-1288. https://dx.doi.org/10.3762/bjnano.7.119

MLA:
Connaughton, Stephen, et al. "Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires." Beilstein Journal of Nanotechnology 7 (2016): 1284-1288.

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Zuletzt aktualisiert 2018-17-10 um 22:00

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