Deactivation of nitrogen donors in silicon carbide

Journal article

Publication Details

Author(s): Schmid F, Pensl G, Bockstedte MG, Mattausch A, Pankratov O, Ohshima T, Itoh H, Weber HB, Reshanov S
Journal: Physical Review B
Publisher: American Physical Society
Publication year: 2006
Volume: B 74
Pages range: 245212
ISSN: 1098-0121


Hexagonal SiC is either co-implanted with silicon (Si+), carbon (C+), or neon (Ne+) ions along with nitrogen (N+) ions or irradiated with electrons (e-) of 200 keV energy. During the subsequent annealing step at temperatures above 1450°C a deactivation of N donors and a reduction of the compensation are observed in the case of the Si+/N+ co-implantation and e- irradiation. The N donor deactivation is investigated as a function of the concentration of the co-implanted species and the annealing temperature. The formation of energetically deep defects is analyzed with deep level transient spectroscopy. A detailed theoretical analysis based on the density functional theory is conducted; it takes into account the kinetic mechanisms for the formation of N interstitial clusters and (N-vacancy) complexes. In accordance with all the experimental results, this analysis distinctly indicates that the (NC) 4 - VSi complex, which is thermally stable at high temperatures and which has no level in the band gap of 4H-SiC, is responsible for the N donor deactivation. © 2006 The American Physical Society.

FAU Authors / FAU Editors

Bockstedte, Michel Georg PD Dr.
Lehrstuhl für Theoretische Festkörperphysik
Pankratov, Oleg Prof. Dr.
Lehrstuhl für Theoretische Festkörperphysik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik

How to cite

Schmid, F., Pensl, G., Bockstedte, M.G., Mattausch, A., Pankratov, O., Ohshima, T.,... Reshanov, S. (2006). Deactivation of nitrogen donors in silicon carbide. Physical Review B, B 74, 245212.

Schmid, Frank, et al. "Deactivation of nitrogen donors in silicon carbide." Physical Review B B 74 (2006): 245212.


Last updated on 2018-19-04 at 02:47