Schuh P, Litrico G, La Via F, Mauceri M, Wellmann P (2017)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2017
Publisher: Trans Tech Publications Ltd
Book Volume: 897
Pages Range: 15-18
Conference Proceedings Title: Materials Science Forum, Silicon Carbide and Related Materials 2016, Volume 897
ISBN: 9783035710434
DOI: 10.4028/www.scientific.net/MSF.897.15
We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3C-SiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm2 which can be enlarged further. The high crystalline quality is characterized by the absence of secondary polytype inclusions and the absence double position grain boundaries.
APA:
Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). 3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers. Materials Science Forum, 897, 15-18. https://doi.org/10.4028/www.scientific.net/MSF.897.15
MLA:
Schuh, Philipp, et al. "3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers." Materials Science Forum 897 (2017): 15-18.
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