Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures

Journal article


Publication Details

Author(s): Beljakowa S, Hauck M, Bockstedte MG, Fromm F, Hundhausen M, Nagasawa H, Weber HB, Pensl G, Krieger M
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publication year: 2014
Volume: 778-780
Pages range: 265-268
ISSN: 0255-5476
eISSN: 1662-9752


Abstract


Persistent conductivity in n-type 3C-SiC is investigated in a wide temperature range down to 3 K by Hall effect, admittance spectroscopy, low temperature photoluminescence (LTPL) and Raman spectroscopy. We propose a model, which clearly explains the persistent behavior of the electron density η below 50 K. It is experimentally verified that the persistent conductivity results from doped SF bunches, which can be considered nano-polytype inclusions in 3C-SiC. © (2014) Trans Tech Publications, Switzerland.



FAU Authors / FAU Editors

Beljakowa, Svetlana Dr.
Lehrstuhl für Angewandte Physik
Fromm, Felix
Lehrstuhl für Laserphysik
Hauck, Martin
Lehrstuhl für Angewandte Physik
Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


How to cite

APA:
Beljakowa, S., Hauck, M., Bockstedte, M.G., Fromm, F., Hundhausen, M., Nagasawa, H.,... Krieger, M. (2014). Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures. Materials Science Forum, 778-780, 265-268. https://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.265

MLA:
Beljakowa, Svetlana, et al. "Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures." Materials Science Forum 778-780 (2014): 265-268.

BibTeX: 

Last updated on 2018-19-04 at 02:47