Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation
Burenkov A, Matthus C, Erlbacher T (2016)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2016
Journal
Publisher: Institute of Electrical and Electronics Engineers Inc.
Book Volume: 16
Pages Range: 4246-4252
Article Number: 7428764
Journal Issue: 11
DOI: 10.1109/JSEN.2016.2539598
Abstract
A numerical model for the simulation of ultraviolet sensitive ion-implanted 4H-SiC photodiodes is established. To explain the measured wavelength dependence of the photoresponsivity of such photodiodes, conventional simulation model was modified twofold. First, new experimental data on the optical properties of 4H-SiC were included into the model. Second, the doping dependence of recombination lifetimes was recalibrated, resulting in a stronger recombination of charge carriers in the ion-implanted region near the SiC surface. After the calibration of the model using experimental data, the model was applied for the optimization of the photodiode performance. An improvement of photoresponsivity by about 30% can be achieved by optimizing the thickness of antireflective layer. An improvement by more than 70% can be achieved by lowering doping level to 1 · 10 cm in the epitaxial layer of 4H-SiC diodes.
Authors with CRIS profile
Christian Matthus
Lehrstuhl für Elektronische Bauelemente
Tobias Erlbacher
Lehrstuhl für Elektronische Bauelemente
Related research project(s)
Involved external institutions
Germany (DE)How to cite
APA:
Burenkov, A., Matthus, C., & Erlbacher, T. (2016). Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation. IEEE Sensors Journal, 16(11), 4246-4252. https://doi.org/10.1109/JSEN.2016.2539598
MLA:
Burenkov, Alexander, Christian Matthus, and Tobias Erlbacher. "Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation." IEEE Sensors Journal 16.11 (2016): 4246-4252.
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